Diamond-based Electronics Laboratory

• We have created a brand new type of reactors using which we can obtain boron-doped delta layer of CVD diamond. A special gas supply system has been developed for the reactor, it allows to provide a mixture of six gases to the reactor and to rapidly switch to another composition of gas mix and laminar flow of gases in the reaction chamber.
• Our researchers have proposed and mathematically substantiated a new structure of delta-doped channel for field transistors. It is based on a new distribution profile for boron concentration in the channel that has two peaks close to each other (the distance is approximately 3 nm). We have shown that such a doping profile leads to 60% increase in mobility and conductivity of the channel compared to channels having a single peak.
• We have a technology that allows to – in the process of growing CVD diamonds - heavily boron doped layers that have thickness of 1-2 nm with (5-10) 1020 cm 3 concentration of boron, having record high hole mobility 300 сm2/Vs with high surface concentration of charge carriers 1013 cm-2. High hole mobility is achieved by major (by four order of magnitude) increase of drop of boron concentration between doped and non-doped diamond on the transition layer of fractions of nanometer. High concentration of charge carriers is achieved by complete ionization of the alloy. The developed technology of creating a thin conductive in the depth of a diamond includes a sequence consisting of growing a CVD diamond in gas mixes with rapidly changing composition containing hydrogen and methane, doping supplement (boron) and boron getter (oxygen or serum). Usage of this technology will allow to produce diamond materials with characteristics suitable for creation of electronic devices of diamonds.
• Our team has developed a field transistor based on doped delta-layer of diamond including transistors with Schottky barriers. A model transistor with delta-layer has been created that allows to adjust for various laws of mobility and incomplete ionization in different regions of the transistor's structure. We have examined correlation between depth of delta-layer Volt-Ampere characteristics Volt-Farad characteristics of the transistor. It has been determined that quality of clearing of a transistor's contacts, stock and drain critically affects main characteristics of the transistor.

Implemented results of research:

The CVD reactor created by the laboratory is now used for research funded by the Russian Scientific Foundation grants.

Education and career development:

• 17 young scientists, specialists, and tutors have completed occupational retraining. Participants of the retraining programs worked for Science and Production Enterprise «Istok» named after A.I.Shokin, Institute of Physics of Microstructures of the Russian Academy of Sciences, Volzhskiy State Institute of Marine Transport, Lobachevskiy Nizhniy Novgorod State University, Ioffe Institute.
• Members of our team have defended 1 doctoral and 4 candidate dissertations
• We have developed lecture courses for Saint Petersburg Electrotechnical University («History and Methodology of Nanotehnology», «Wide-zone diamond-like materials and devices based on them») and Lobachevskiy Nizhniy Novgorod State University («Technological basics of plasma technologies», «Laboratory case study of plasma physics»). We have also modernized the «Physics gas discharge»,
• Our employees have given lectures on the grounds of the Znanie-NN Science and Education Center.

Collaborations:

National Institute of Standards and Technology (USA) - collaboration in research of characteristics of samples of layers of CVD diamond that have been delta-doped with boron.