Laboratory for Synchrotron Radiation Detectors

Shekhtman Lev Isayevich

Contract number

075-15-2022-1132

Time span of the project

2022-2024

Laboratory's website

As of 01.12.2023

Number of staff members

scientific publications

Objects of intellectual property

Name of the project:

Developing the fundamentals of physics and technology for radiation-resistant semiconductor structures and creating multielement detectors based on them for the fourth-plus-generation synchrotron SKIF and other mega-science projects in Russia

Research directions: Physics and astronomy

Goals of project:

Forming a laboratory of synchrotron radiation detectors within the structure of the Tomsk State University under the supervision of a leading scientists to perform forward-looking research for the development of the fundamentals of the physics of the radiation hardness of semiconductor materials and structures with complex compositions based on gallium arsenide modified with admixtures with deep levels and the development of the fundamentals of a technology of producing radiation-resistant semiconductor materials, multielement sensors, digital electronics and detectors for the fourth-plus-generation synchrotron center SKIF and other mega-sceince projects in Russia.

Project objective:

Performing fundamental research of the radiation resistance of semiconductor materials and structures with complex compositions based on gallium arsenide modified with admixtures with deep levels in the process of epitaxy and diffusion.
Developing the fundamental basics of the technology of the production of radiation-resistant materials and semiconductor structures based on original HR-GaAs:Cr diffusional and epitaxial layers and doped metal-oxide compounds.
Developing the fundamentals of technologies of radiation-resistant multielement sensors capable of registering the coordinates and energies of single quants of synchrotron radiation with a low latency and a high spatial resolution.
Researching the laws of the radiation hardness of detector structures and multichannel detectors based on neutrons and a beam of charged particles.
Developing a design and a technology for Russian fast digital application-specific integrated circuits (ASIC) for channel-by-channel conversion of the energy of quants to digital code, processing data from a multichannel radiation-resistant sensor with a distribution between specified subranges of the energies of the registered quants of synchrotron radiation.
Developing a technology for forming contact bumps with a high heterogeneity in terms of height and a technology for channel-by-channel «flip-chip» assembly of a multichannel sensor with ASIC sensory chips.
Developing the fundamentals of the physics of interaction between detector structures, matrix and microstrip detectors and synchrotron radiation, substantiation of the use of achieved results in various domains of science., medicine and industry.
Researching the limits of the radiation resistance of multichannel HR-GaAs:Cr detectors.
Testing multichannel detectors in ion beams to determine the spatio-temporal characteristics and the spectral characteristics of the detectors.
Developing the fundamentals of the digital imaging of various objects and dynamic processes with a high spatial resolution.
Developing the fundamentals of the physics of interaction between multielement detectors and synchrotron radiation at the Russian fourth-plus generation facility SKIF attaining a micro- and nanoscopic structure of images of the real object.
Researching the fundamentals of physics and creating a technology of radiation-resistant coordinate detectors for physical experiments at the International Linear Collider (ILC), the charm-tau factory (Institute of Nuclear Physics of the Siberian Branch of the Russian Academy of Sciences), СЕРС (China PR), FCC (CERN).

Scientific results:

The Laboratory of Synchrotron Radiation Detectors (SLDR) has been established, the only scientific and technological division in the Russian Federation that has developed a science-intensive technology of detector material that has no analogues in the world – quantum-sensitive gallium arsenide HR-GaAs:Cr structures and matrix ionizing radiation detectors based on them. SLDR has created an experimental production line for the manufacture of HR-GaAs:Cr structures and matrix detectors for the organization of import-substituting production of multispectral digital X-ray color imaging systems for industry, medicine and science in Russia.

Implementation of research results:

HR-GaAs:Cr structures, matrix sensors and detectors, developed and manufactured at the laboratory's pilot plant, are in demand on the global market, are used in the world's leading scientific centers: CERN (Switzerland); DESY (Germany); ESRF (France); PSI (Switzerland); RAL (United Kingdom); JINP (Russia); INP AN RUz (Uzbekistan); “spin-off” of companies in the world: Dectris (Switzerland); X-Counter (Sweden); ImXPad (France); MARS (Zealand); SkyScan (Netherlands); XpectVision (China); Rigaku Corp. (Japan), as well as at 17 enterprises of the Russian Federation, including those listed in paragraph 5 of the section.

Organizational and infrastructural changes:

The premises have been prepared to support the process of manufacturing prototypes, and to study the electrophysical, electrical and photoelectric characteristics of HR-GaAs:Cr structures.

Education and personnel occupational retraining:

In 2022, three programs of disciplines were developed and implemented in the educational process as part of the implementation of the master's program:

"Terahertz optoelectronics".
"Materials and structures of functional electronics and photonics".
"FPGA technologies".

In 2023, six programs of disciplines were developed and implemented in the educational process as part of the implementation of the master's program:

"Analog circuit engineering".
"Analog integrated circuits".
"Microcontrollers".
"Instrument and technological modeling in microelectronics".
"Synchrotron radiation generation and registration".
"Technologies of materials and devices of microelectronics".

A new professional module "Synchrotron Radiation Detectors" has been developed and introduced into the educational program of the TSU Master's program at the Radiophysics Faculty, including three independent, complementary disciplines:

"Analog integrated circuits for conducting a physical experiment".
"Modeling of semiconductor detectors of ionizing radiation".
"Generation and registration of synchrotron radiation".

As a result of the project implementation, the following were defended: 1 dissertation for the degree of Doctor of Science, 4 dissertations for the degree of Candidate of Science, 2 master's theses, 5 bachelor's degrees.

The laboratory staff, under the supervision of the leading scientist, completed 4 scientific internships at the Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences (Russia, Novosibirsk) on the topics: "Patterns of interaction of synchrotron X-ray radiation with sensors based on single-crystal sapphire", "Modeling the dynamics of the photocurrent of microstrip sensors based on HR-GaAs:Cr structures under the influence of synchrotron X-ray radiation", "Calculation of radiation fields and energy release under the influence of synchrotron X-ray radiation on HR GaAs:Cr structures using FLUKA software", "Modeling the dynamics of the photocurrent of sensors based on silicon p+-n0-n+ structures (Si p+-n0-n+ structures) under the influence of synchrotron X-ray radiation".

Cooperation:

State Corporation Rosatom, Department of Nuclear Ammunition Industry.
State Corporation Rosatom, Federal State Unitary Enterprise All-Russian Research Institute of Automation named after N.L. Dukhov.
State Corporation Rosatom, Joint-Stock Company Specialized Research Institute of Instrument Engineering.
State Corporation Rosatom, JSC V.V. Tikhomirov Research Institute of Instrument Engineering.
State Corporation Rosatom, JSC TVEL.
State Corporation Rosatom, JSC Siberian Chemical Plant.
Federal State Budgetary Institution B.P. Konstantinov Petersburg Institute of Nuclear Physics of the National Research Center Kurchatov Institute.
Joint Institute for Nuclear Research, Dubna.
Federal State Budgetary Scientific Institution "G.I. Budker Institute of Nuclear Physics of the Siberian Branch of the Russian Academy of Sciences".

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Prudaev I., Kopyev V., Oleinik V.

Microplasma Breakdown in GaAs-Based Avalanche S-Diodes Doped with Deep Fe Acceptors // Physica Status Solidi (B): Basic Research. 2023. Vol. 260, Iss. 4. Article number 2200446. DOI: 10.1002/pssb.202200446.

Chsherbakov I.D., Shaimerdenova L.K., Shemeryankina A.V., Skakunov M.S., Tolbanov O.P., Tyazhev A.V., Zarubin A.N., Trofimov M.S.

Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers // Russian Physics Journal. 2023. Vol. 66, Iss. 6. P. 626–631. DOI: 10.1007/s11182-023-02985-2.

Tyazhev A.V., Vinnik A.E., Zarubin A.N., Kosmachev P.V., Novikov V.A., Skakunov M.S., Tolbanov O.P., Shaimerdenova L.K., Shemeryankina A.V., Shcherbakov I.D.

Multi-Spectral X-Ray Detectors for Nondestructive Testing of 3D Printed Polymer Composites // Russian Physics Journal. 2023. Vol. 66, Iss. 7. P. 771–778. DOI: 10.1007/s11182-023-03004-0.

Aulchenko V.M., Glushak A.A., Zhulanov V.V., Zhuravlev A.N., Kiselev V.A., Kudryavtsev V.N., Piminov P.A., Titov V.M., Shekhtman L.I.

Silicon Microstrip Detector for Studying Fast Processes on a Synchrotron Beam // Journal of Surface Investigation. 2023. Vol. 17, Iss. 6. P. 1356–1363. DOI: 10.1007/s11182-023-03004-0.

Aulchenko V.M., Glushak A.A., Zh. V.V., Titov V.M., Shekhtman L.I.

Development of a One-Dimensional Detector for Diffraction Experiments at the Synchrotron Radiation Beam// Journal of Surface Investigation. 2023. Vol. 17, Iss. 4. P. 892–897. DOI: 10.1134/S1027451023040213.

Bereznaya S.A., Redkin R.A., Brudnyi V.N., Sarkisov Yu.S., Su Xi., Sarkisov S.Yu.,

Optical Absorption, Photocarrier Recombination Dynamics and Terahertz Dielectric Properties of Electron-Irradiated GaSe Crystals // Crystals. 2023. Vol. 13, Iss. 11. Article number 1562. DOI: 10.3390/cryst13111562.

Kalygina V.M., Tsymbalov A.V., Almaev A., Kushnarev B.O., Oleinik V.L., Petrova J.V., Yunin P.A.

Influence of White Light on the Photoelectric Characteristics of UV Detectors Based on β-Ga2O3 // IEEE Sensors Journal. 2023. Vol. 23, Iss. 14. Article number 15530. DOI: 10.1109/JSEN.2023.3284412.

Production secret (know-how) "Method of hidden marking of high-resistance gallium arsenide plates compensated with chromium"

Authors: Vinnik A.E., Zarubin A.N., Skakunov M.S., Tolbanov O.P., Tyazhev A.V., Shaimerdenova L.K.; date of registration – 12.12.2022;

Software for electronic computers "Program for forming an image of semiconductor wafers with a diameter of 50-150 mm in infrared radiation"

Authors: Tyazhev A.V., Skakunov M.S., Vinnik A.E., Shaimerdenova L.K.; date of registration – 20.12.2022;

Software for electronic computers "Program for improving the quality of X-ray images by individual correction of the sensitivity of individual sensor elements";

Authors: Shemeryankina A.V., Vinnik A.E., Tyazhev A.V.; date of registration – 23.06.2023;

Program for electronic computers "Program for calculating EL2 centers in gallium arsenide plates by processing the image of the plates in transmitted infrared radiation"

Authors: Vinnik A.E., Skakunov M.S., Tyazhev A.V., Shemeryankina A.V.; date of registration – 06.26.2023.

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