Laboratory for Ultra Wide-band Gap Semiconductors

Scientific results:

• Features of the behavior of devices based on ultra-wide bandgap materials have been revealed when the size of the active region is reduced by dry etching (for GaN)
• for the first time, using the methods of photoelectric spectroscopy of deep levels and positron annihilation, the patterns of radiation defect formation in high-resistivity films of the alpha polymorph Ga2O3 under irradiation with protons and carbon were studied;
• the formation of a two-dimensional hole gas in heterojunctions of kappa polymorph modification of gallium oxide was demonstrated for the first time;
• for the first time, the electrical characteristics of layers of gamma-polymorphic modification of gallium oxide formed by implantation of gallium into a beta-polymorph Ga2O3 followed by Si implantation and hydrogen plasma treatment, the nature of important defects formed in beta-Ga2O3 during high-temperature annealing in hydrogen has been studied.
• For the first time, proton irradiation of Schottky diodes based on the gamma polymorph was carried out, a comparison was made with the beta polymorph, the increased radiation resistance of gamma-Ga2O3 was proven;
• for the first time, a domestic p-GaN/n-β-GaO3 heterojunction was manufactured, and the potential for using such heterojunctions for power applications, where breakdown voltages reach tens of kV, was assessed.

Organizational and infrastructural changes:

The laboratory of ultra-wide bandgap semiconductors has been opened at NUST MISIS.

Education and personnel occupational retraining:

Kochkova Anastasiia defended her PhD thesis “Investigation of Electric Characteristics and Spectra of Deep Centers in Bulk Crystals and Epitaxial Films of β-Ga₂O₃”

Cooperation:

1. Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences (IMT RAS), Russia
2. Ioffe Institute, Russia
3. Perfect Crystals, Russia
4. Korea University, Republic of Korea
5. Hubei University, China