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Name of the project:

New radiation phenomena in gallium oxide and their application in devices.
Goals and objectives
Research directions: 

Understanding how high concentrations of point defects and associated elastic stresses in Ga2O3-based wide-band semiconductors can overcome the main disadvantages of the Ga2O3 system: low thermal conductivity, absence of impurities or defects that create effective hole conductivity, pronounced polymorphism and the difficulty of combining different polymorphs in one device to maximize the positive effects given by each polymorph, strong metastability of properties.

Project objective:

  1. Active use of radiation defects created by ion implantation.
  2. Control and optimization of this process to obtain the required material properties.
The practical value of the study

  • Revealed the features of the behavior of devices based on Wide-bandgap materials with a decrease in the size of the active region using dry etching (using GaN as an example).
  • The radiation defect formation in high-resistivity α-polymorph films upon  protons and carbon irradiation has been studied using methods of Deep-Level Transient Spectroscopy and Positron Annihilation Spectroscopy for the first time. The formation of a two-dimensional hole gas in heterojunctions with the κ-Ga2O3 polymorph is demonstrated for the first time.
  • Studied the electrical characteristics of the κ-polymorph of Gallium Oxide formed by the implantation of gallium into the β-polymorph with subsequent implantation of silicon and treatment in H2 plasma.
  • Revealed the nature of important defect centers formed in β-polymorph of gallium oxide during high-temperature annealing in hydrogen.

Education and career development:

A PhD thesis (physical and mathematical sciences) has been prepared for defense (the defense is planned for 2023)

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