[EN] Лаборатории

Contract number

075-15-2022-1113

Time span of the project

2022-2024

since June 2023 Yakimov Eugene Borisovich

2023 - 2023 Кузнецов Андрей Юрьевич

As of 01.11.2022

Number of staff members

scientific publications

Objects of intellectual property

Name of the project:

New radiation phenomena in gallium oxide and their application in devices.

Research directions:

Understanding how high concentrations of point defects and associated elastic stresses in Ga2O3-based wide-band semiconductors can overcome the main disadvantages of the Ga2O3 system: low thermal conductivity, absence of impurities or defects that create effective hole conductivity, pronounced polymorphism and the difficulty of combining different polymorphs in one device to maximize the positive effects given by each polymorph, strong metastability of properties.

Project objective:

Active use of radiation defects created by ion implantation.
Control and optimization of this process to obtain the required material properties.

Scientific results:

Our researchers have studied the features of the behavior of devices based on wide-band-gap materials when the size of the active zone decreases with the use of dry etching (on the example of GaN), for the first time we have studied the laws of radiation defect formation in high-ohmic films of alpha-polymorph when irradiated with protons and carbon using methods of photoelectric spectroscopy of deep levels and annihilation of positrons, for the first time we demonstrated the formation of a two-dimensional hole gas in hetero-junctions with cappa-polymorph of gallium oxide, for the first time we studied the electric characteristics of layers of cappa-polymorph of gallium oxide formed by implanting gallium into a beta-polymorph with subsequent implantation of silicon and treatment in hydrogen plasma, we studied the nature of important defect centers formed in the beta-polymorph of gallium oxide during high-temperature annealing in hydrogen.

Education and career development:

A dissertation for the degree of Candidate of Sciences in Physics and Mathematics has been prepared (defense planned for 2023).

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Lee, I.-H., Kim, T.-H., Polyakov, A. Y., Chernykh, A. V., Skorikov, M. L., Yakimov, E. B., Alexanyan, L. A., Shchemerov, I. V., Vasilev, A. A., & Pearton, S. J.

Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters < 30 µm. In Journal of Alloys and Compounds (Vol. 921, p. 166072, 2022) https://doi.org/10.1016/j.jallcom.2022.166072

Polyakov, A. Y., Nikolaev, V. I., Meshkov, I. N., Siemek, K., Lagov, P. B., Yakimov, E. B., Pechnikov, A. I., Orlov, O. S., Sidorin, A. A., Stepanov, S. I., Shchemerov, I. V., Vasilev, A. A., Chernykh, A. V., Losev, A. A., Miliachenko, A. D., Khrisanov, I. A., Pavlov, Yu. S., Kobets, U. A., & Pearton, S. J.

Point defect creation by proton and carbon irradiation of α-Ga2O3. In Journal of Applied Physics (Vol. 132, Issue 3, p. 035701, 2022) https://doi.org/10.1063/5.0100359

Hosting organization	Field of studies	City	Invited researcher	Time span of the project
Laboratory for Ion-selective membranes M.V.Lomonosov Moscow State University - (MSU)	Material Technology	Moscow	Ameduri Bruno Michel France	2022-2024
Laboratory of neural electronics and memristive nanomaterials Southern Federal University - (SFedU)	Material Technology	Taganrog	Park‬ Bae Ho Korea	2022-2024
Laboratory for Advanced Steels for Agricultural Equipment Russian State Agrarian University - Moscow Timiryazev Agricultural Academy - (RSAU – MTAA named after K.A. Timiryazev)	Material Technology	Moscow	Kaibyshev Rustam Oskarovich Russia	2021-2023

Laboratory for Ultra Wide-band Gap Semiconductors