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Contract number
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Invited researcher

As of 01.11.2022

Number of staff members
scientific publications
Objects of intellectual property
General information
Name of the project:

New radiation phenomena in gallium oxide and their application in devices.
Goals and objectives
Research directions: 

Understanding how high concentrations of point defects and associated elastic stresses in Ga2O3-based wide-band semiconductors can overcome the main disadvantages of the Ga2O3 system: low thermal conductivity, absence of impurities or defects that create effective hole conductivity, pronounced polymorphism and the difficulty of combining different polymorphs in one device to maximize the positive effects given by each polymorph, strong metastability of properties.

Project objective:

  1. Active use of radiation defects created by ion implantation.
  2. Control and optimization of this process to obtain the required material properties.
The practical value of the study

Scientific results:

Our researchers have studied the features of the behavior of devices based on wide-band-gap materials when the size of the active zone decreases with the use of dry etching (on the example of GaN), for the first time we have studied the laws of radiation defect formation in high-ohmic films of alpha-polymorph when irradiated with protons and carbon using methods of  photoelectric spectroscopy of deep levels and annihilation of positrons, for the first time we demonstrated the formation of a two-dimensional hole gas in hetero-junctions with cappa-polymorph of gallium oxide, for the first time we studied the electric characteristics of layers of cappa-polymorph of gallium oxide formed by implanting gallium into a beta-polymorph with subsequent implantation of silicon and treatment in hydrogen plasma, we studied the nature of  important defect centers formed in the beta-polymorph of gallium oxide during high-temperature annealing in hydrogen. 

Education and career development:

A dissertation for the degree of Candidate of Sciences in Physics and Mathematics has been prepared (defense planned for 2023).

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